对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
ASI10639 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, | - | |||||
ASI10658 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | - | |||||
AD | FDMT800100DC | Arrow | Trans MOSFET N-CH Si 100V 24A 8-Pin QFN EP T/R | |||||
ASI10712 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, | - | |||||
ASI10568 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, | - | |||||
ASI10567 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, | - | |||||
ASI10732 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, | - | |||||
ASI1002 | Advanced Semiconductor Inc | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, L Band, Silicon, NPN, | - | |||||
ASI10591 | Advanced Semiconductor Inc | Power Bipolar Transistor, 4.5A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, | - | |||||
ASI10596 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 | - | |||||
ASI10555 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, | - | |||||
ASI10590 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 | - | |||||
ASI1010 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, HERMETIC SEALED, FM-2 | - | |||||
ASI10533 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, 0.310 INCH, FM-2 | - | |||||
ASI10803 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, | - | |||||
ASI10725 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 | - | |||||
ASI10709 | Advanced Semiconductor Inc | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, 4L, FM-4 | - | |||||
ASI10740 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, | - | |||||
ASI10621 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | - | |||||
ASI10682 | Advanced Semiconductor Inc | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 | - | |||||
ASI10710 | Advanced Semiconductor Inc | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | - |